![]() ![]() The cookie is set by the GDPR Cookie Consent plugin and is used to store whether or not user has consented to the use of cookies. The cookie is used to store the user consent for the cookies in the category "Performance". This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Other. The cookies is used to store the user consent for the cookies in the category "Necessary". The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category "Functional". The cookie is used to store the user consent for the cookies in the category "Analytics". These cookies ensure basic functionalities and security features of the website, anonymously. Necessary cookies are absolutely essential for the website to function properly. The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off-the-shelf (COTS) versions. ![]() The extended family of MOSFETs includes N and P channel in single and multi-chip configurations offered in a range of through-hole and surface mount packages including SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, Low-Ohmic TO-257AA, and MO-036AB. ![]() Moreover, low on-state resistance (RDS(on)), fast switching and small size, make the MOSFETs ideal alternatives to traditional bipolar devices. This helps reduce part count, simplify drive circuitry and enhance reliability. El Segundo, Calif.International Rectifier, IR, expanded its portfolio of RAD-Hard logic level gate drive MOSFETs with the introduction of 60 V, 100 V and 250 V MOSFETs for switch mode power supplies (SMPS), satellite power distribution systems and resonant power converters in high-reliability applications.Ĭompared to bipolar transistors, the RAD-Hard MOSFETs can be driven directly from CMOS/TTL logic circuitry, eliminating the need for intermediate components. ![]()
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